MRF7S27130HR3 MRF7S27130HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 8 0
-- 2 0
1
-- 4 0
-- 5 0
10
-- 3 0
7th Order
5th Order
3rd Order
200
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
1 10010
IM3--U
-- 2 0
-- 3 0
-- 5 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 4 0
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
C
-- 1 5
-- 5 0
-- 6 5
C
-- 4 5
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
55
50
45
20
110100
35
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
ηD
40
25
Gps
VDD
=28Vdc,IDQ
= 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
VDD
=28Vdc,Pout
= 105 W (PEP), IDQ
= 1500 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
300
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 1500 mA
f = 2600 MHz
TC
=--30_C
-- 3 0_C
10
1
18
17
16
_C
50
40
30
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
02550
13
18
15
16
17
IDQ
= 1500 mA
f = 2600 MHz
200
VDD
=24V
28 V
0
-- 4 0
-- 3 5
C
-- 3 0
C
-- 2 5
C
-- 2 0
25
85_C
32 V
5
TC
=--30_
VDD=28Vdc,IDQ
= 1500 mA
f = 2600 MHz, 802.16d, 64 QAM
3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on
CCDF
25_
-- 3 0_C
85_
75 100
-- 6 0
85_
25_
-- 3 0_C
25_C
-- 5 5
85_C
15
14
20
10
25_C
85_C
14
175
-- 6 0
-- 7 0
100
-- 1 0
125 150
100
30
15
10
300
-- 1 0
-- 6 0
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